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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-220Fpackage *Low saturation voltage. *Complement to type 2SC3748 *Fast switching speed. APPLICATIONS *Car-use inductance drivers, lamp drivers. *Inverters drivers, converters *Power amplifications *Switching regulators,drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SA1471 * Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -10 -12 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1471 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA; IE=0 IC=-1mA; RBE= IE=-1mA; IC=0 IC=-5A; IB=-0.25A VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 100 MIN -80 -60 -5 -0.4 -100 -100 280 MHz TYP. MAX UNIT V V V V A A Switching times ton tstg tf Turn-on time Storage time Fall time VCC=20V; IC=5A IB1=-IB2=-0.25A RL=4 0.1 0.5 0.1 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1471 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1471 4 |
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